|
Model
No. VCT-F85A41-OH
High Performance
& High Power 850nm
Oxide VCSEL Diode for Data
Communication
FEATURES:
-
High power 850 nm VCSEL diode in TO-46
package with flat window and PD
-
High output power 8mW @ 16mA
typical
-
Low threshold current 4 mA
typical
-
Data
rate >1Gbps @12mA
Optical and Electrical Characteristics
|
|
Parameter
|
Symbol
|
Min.
|
TYP.
|
Max.
|
Unit
|
Test
Condition
|
|
Peak Wavelength
|
lp
|
835
|
845
|
860
|
nm
|
If = 12mA @ RT
|
|
Spectral Width (FWHM)
|
Dl
|
-
|
0.5
|
1
|
nm
|
If = 12mA @ RT
|
|
Beam Divergence
|
Q
|
|
25
|
30
|
Deg
|
Full width at 1/e2
|
|
Forward Voltage
|
Vf
|
-
|
1.9
|
2.4
|
V
|
If = 12mA @ RT
|
|
Threshold Current
|
Ith
|
|
4
|
7
|
mA
|
|
|
Optical Output Power
|
PO
|
|
8
|
-
|
mW
|
If = 16mA @ RT
|
|
Peak Optical Output Power
|
Pmax
|
10
|
14
|
-
|
mW
|
@ RT
|
|
Operating
Current @
Pmax
|
Imax
|
-
|
22
|
-
|
mA
|
@ RT
|
|
Slop Efficiency
|
dP/dI
|
-
|
0.7
|
1
|
W/A
|
If = 12mA @ RT
|
|
Dynamic Resistance
|
dV/dI
|
20
|
45
|
65
|
W
|
If = 12mA @ RT
|
|
Rise / Fall Time
|
tr / tf
|
|
100
|
200
|
ps
|
20% -80%,
If = 12mA @ RT
|
|
Jitter p-p
|
Tj
|
|
60
|
|
ps
|
|
|
Monitor
Current
|
Im
|
100
|
500
|
|
mA
|
If = 12mA @ RT
|
|
lp Temperature Coefficient
|
Dlp/DT
|
|
0.06
|
|
nm/ oC
|
TA = 0-70 oC, If =
12mA
|
|
Maximum
Ratings
|
|
|
|
|
|
Parameter
|
Min.
|
Max.
|
Unit
|
Condition
|
|
Storage Temperature
|
-40
|
100
|
oC
|
|
|
Operating Temperature
|
-10
|
50
|
oC
|
|
|
Continuous Forward Current
|
|
16
|
mA
|
|
|
Continuous Reverse Voltage
|
|
5
|
V
|
@ 10mA
|
Monitoring
PD
|
Parameter
|
Symbol
|
Min
|
TYP
|
Max
|
Unit
|
Test
Condition
|
|
Dark
current
|
Ir
|
-
|
0.2
|
1
|
nA
|
Vr
= 10 V
|
|
Shunt
resistance
|
Rp
|
100
|
200
|
-
|
GW
|
|
|
Breakdown
voltage
|
Vbr
|
-
|
50
|
-
|
V
|
|
|
Junction
capacitance
|
Cp
|
-
|
40
|
-
|
pF
|
@
Vr =
10 V,10 KHz
|
Note: The above specification is subject to change without
notice.
Pin
Configuration:
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|
 |
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Model No. VCT-F85A41-OH
Pin 1: case
Pin 2: VCSEL anode
Pin 3: VCSEL cathode/PD anode
Pin 4: PD cathode
(Common Cathode pinout)
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