850nm Mode Oxide VCSEL Chip

Model No.: VCC-85A3G-O

FEATURES:

· High performance oxidation VCSEL chip designed for datacom application

· Low threshold current 2 mA typical

· Optical window diameter 14 mm and oxidation aperture diameter 10 mm

· Capable to run the speed of 2.5Gbps, 3.125Gbps or higher in datacom application.

1. Optical and Electrical Characteristics

Parameter	Symbol	Min.	TYP.	Max.	Unit	Test Condition
Peak Wavelength	l_p	830	845	860	nm	I_f= 8mA @ RT
Spectral Width (FWHM)	Dl	---	0.5	0.85	nm	I_f= 8mA @ RT
Beam Divergence	Q	---	25	30	Deg	Full width at 1/e²
Forward Voltage	V_f	1.7	1.9	2.2	V	I_f= 8mA @ RT
Threshold Current	I_th		2	3	mA
Peak Optical Power	P_max		2.4		mW	I_f= 8mA @ RT
Slop Efficiency	dP/dI	0.25	0.4	0.7	W/A	I_f= 8mA @ RT
Dynamic Resistance	dV/dI	25	40	65	W	I_f= 8mA @ RT
Reverse Breakdown Voltage	V_b	5	10	15	V
Rise / Fall Time	t_r/t_f		50	100	ps	20% - 80%
Jitter p-p	t_j		35		ps

2. Maximum Ratings

Parameter	Min.	Max.	Unit	Condition
Storage Temperature	-40	100	^oC
Operating Temperature	0	85	^oC
Continuous Forward Current		10	mA
Continuous Reverse Voltage		5	V	@ 10mA

3. Thermal Characteristics

Parameter	Symbol	Min.	TYP.	Max.	Unit	Test Condition
I_thTemperature Variation	DI_th		-0.01		mA	T_A= 0 - 70 ^oC
V_fTemperature Coefficient	DV_f/DT		-2.5		mV/^oC	T_A= 0 - 70 ^oC, I_f= 8mA
l_pTemperature Coefficient	Dl_p/DT		0.06		nm/^oC	T_A= 0 - 70 ^oC, I_f= 8mA

Note 1. Chips are made from wafers with 14 mm light-emitting and 10 mm of oxidation apertures.

Note 2. These specifications are subject to change without notice.

Physical Dimensions

Parameter	Unit	TYP.
Die Length	µm	305
Die Width	µm	250
Die Height	µm	120
Bond pad Diameter	µm	85

DEVICE TOP VIEW

(Only metal patterns and scribe-channel mesa are shown here.)

If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.

Lasermate Group, Inc.
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998

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