|
High performance implant
single mode 850nm VCSEL chip
Model No. VCC-85A1G-IS
Features:
-
850nm implant single mode VCSEL
-
Emitting area dia. 5mm
-
Chip size of 270mm
x 270mm
-
Low beam divergence: 8 degree typ.
-
> 2.0 mW single mode optical power with a minimum
20 dB SMSR
-
High ESD value of > 1 kV
Applications:
-
Data communication
-
Sensing
Absolute Maximum Ratings:
|
Parameter
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
Note
|
|
Optical Power
|
Po
|
2.0
|
|
|
mW
|
CW
|
|
Storage Temperature
|
|
-40
|
|
85
|
℃
|
|
|
Operating Temperature
|
|
-0
|
|
70
|
℃
|
|
|
Reverse Voltage
|
VR
|
5
|
|
|
V
|
|
|
Forward Current
|
IF
|
|
|
15
|
mA
|
|
Optical / Electrical Characteristics (T=
25℃
):
|
Parameter
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
Note
|
|
Optical Output Power
|
PO
|
2.0
|
|
|
mW
|
IF=12mA
|
|
Forward Voltage
|
VF
|
|
|
3.0
|
V
|
IF=12mA
|
|
Threshold Current
|
Ith
|
|
3
|
6
|
mA
|
|
|
Operating Current
|
Iop
|
|
6
|
10
|
mA
|
Po
=1.0 mW
|
|
Operating Voltage
|
Vop
|
|
|
2.5
|
V
|
Po
=1.0 mW
|
|
Center Wavelength
|
λc
|
840
|
850
|
860
|
nm
|
|
|
Side Mode Suppression Ratio
|
SMSR
|
20
|
|
|
dB
|
|
|
Beam Divergence
|
θFWHM
|
|
8
|
|
deg
|
IF=10mA
|
|
Slope Efficiency
|
η
|
0.1
|
|
|
mW/mA
|
0.5~
1.5m
W
|
|
Series Resistance
|
Rs
|
|
|
150
|
Ω
|
|
|
ESD Threshold
|
ESD
|
1 k
|
|
|
V
|
Human
body mode
|
Note: The
specifications are subject to change without notice.
Chip
configuration:
1.
Top contact: Anode; Bottom contact: Cathode.
2.
Dimension: 270 um (width) x 270 um (length) x 130 um (thickness)
Tolerance:
±12.5um
3.
Bond pad size: 100um diameter.
Chip
mechanical outline
(unit:
mm)
|
