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VCA-1XN-A3G-O
High performance oxidation
VCSEL 1D array for data communication
FEATURES:
-
850 nm oxide VCSEL 1D array
-
1x N (N= 2, 3, …) array with single element size 305 mm
x 250 mm x 120 mm
-
Low threshold current 2 mA typical
-
Optical window diameter 14 mm
and oxidation aperture diameter 10 mm
-
Capable to run the speed of 2.5Gbps or
higher in datacom applications.
1.
Optical and Electrical Characteristics
|
Parameter
|
Symbol
|
Min.
|
TYP.
|
Max.
|
Unit
|
Test
Condition
|
|
Peak
Wavelength
|
lp
|
830
|
845
|
860
|
nm
|
If
= 8mA @ RT
|
|
Spectral
Width (FWHM)
|
Dl
|
---
|
0.5
|
0.85
|
nm
|
If
= 8mA @ RT
|
|
Beam
Divergence
|
Q
|
---
|
25
|
30
|
Deg
|
Full
width at 1/e2
|
|
Forward
Voltage
|
Vf
|
1.7
|
1.9
|
2.2
|
V
|
If
= 8mA @ RT
|
|
Threshold
Current
|
Ith
|
|
2
|
3
|
mA
|
|
|
Peak
Optical Power
|
Pmax
|
|
2.4
|
|
mW
|
If
= 8mA @ RT
|
|
Slop
Efficiency
|
dP/dI
|
0.25
|
0.4
|
0.7
|
W/A
|
If
= 8mA @ RT
|
|
Dynamic
Resistance
|
dV/dI
|
25
|
40
|
65
|
W
|
If
= 8mA @ RT
|
|
Reverse
Breakdown Voltage
|
Vb
|
5
|
10
|
15
|
V
|
|
|
Rise
/ Fall Time
|
tr/tf
|
|
50
|
100
|
ps
|
20%
- 80%
|
|
Jitter
p-p
|
tj
|
|
35
|
|
ps
|
|
2.
Maximum Ratings
|
Parameter
|
Min.
|
Max.
|
Unit
|
Condition
|
|
Storage
Temperature
|
-40
|
100
|
oC
|
|
|
Operating
Temperature
|
0
|
85
|
oC
|
|
|
Continuous
Forward Current
|
|
10
|
mA
|
|
|
Continuous
Reverse Voltage
|
|
5
|
V
|
@
10mA
|
3. Thermal
Characteristics
|
Parameter
|
Symbol
|
Min.
|
TYP.
|
Max.
|
Unit
|
Test Condition
|
|
Ith Temperature Variation
|
DIth
|
|
-0.01
|
|
mA
|
TA = 0 - 70 oC
|
|
Vf Temperature Coefficient
|
DVf/DT
|
|
-2.5
|
|
mV/ oC
|
TA = 0 - 70 oC,
If = 8mA
|
|
lp Temperature Coefficient
|
Dlp/DT
|
|
0.06
|
|
nm/ oC
|
Note
1. Chips are made from wafers with 14 mm light-emitting and 10 mm
of oxidation apertures.
Physical Dimensions
|
Parameter
|
Unit
|
TYP.
|
|
Die
Length
|
µm
|
305
|
|
Die
Width
|
µm
|
250
|
|
Die
Height
|
µm
|
120
|
|
Bond
pad Diameter
|
µm
|
85
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DEVICE TOP VIEW
(Only metal patterns and
scribe-channel mesa are shown here.)
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