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Model No. VCA-1xN-A1G (N = 2, 3, ….)

Features:

  • 850 nm implant VCSEL 1xN array 
  • 1 x N (N=2, 3,…) array bar with 250 mm pitch
  • Dimensions of 1xN array: 305mm x 250mm (N) x 100m
  • Rise/Fall time 135/150 ps typical
  • Optimized for fiber optic applications 

ELECTRO-OPTICAL CHARACTERISTICS:

PARAMETERS

SYMBOL

MIN    TYP    MAX

UNIT

TEST CONDITIONS (1) (2)

Threshold Current

Ith

2          5        7

mA

 

Output Power

Po

2

mW

IF =12 mA

Slope Efficiency

h

     0.2         0.3        0.5

mW/mA

IF =12 mA (3)

Wavelength

lP

835      845      860

nm

IF=12 mA

Spectral Width (FWHM)

Dl

         0.5       1

nm

IF=12 mA

Threshold Voltage

Vth

1.45      1.55     1.65

V

 

Forward Voltage

VF

1.7         2.0        2.5

V

IF=12 mA

Breakdown Voltage

VBD

        5         10         15            

V 

Dynamic Resistance

dV/dI

20        35      50

W

IF =12 mA

Beam Divergence

q

12

degree

Full width at 1/e2

Rise / Fall Time

Tr/Tf

             135/150

ps

 

Jitter p-p

Tj

30

ps

 

Threshold Current Uniformity(4)

DIth

0.4

mA

Within single array

Output Power Uniformity (5)

DPo

0.3

mW

IF=12 mA

Operation Temperature Range (6)

Top

-5       25       80

oC  

Notes: 

1. Parameters are measured with chip die-bonded to a metal header.

2. All parameters except mentioned are measured at IF=12 mA, 25oC, CW.

3. Slope efficiency is defined as DP/(12-IF) at 25oC.

4. Defined as the difference between the maximum and minimum threshold currents measured for a given 1xN array.

5. Defined as the difference between the maximum and minimum output power measured for a given 1xN array.

6. Maximum power larger than 1mW in the range of temperature

ABSOLUTE MAXIMUM RATINGS:

PARAMETERS

MIN          MAX

UNIT

CONDITIONS

Storage Temperature

-30           100

oC

 

Operating Temperature

-30            85

oC

 

Continuous Forward Current

                 30

mA

 

Continuous Reverse Voltage

                5

V

 

THERMAL CHARACTERISTICS:

PARAMETERS

SYMBOL

MIN    TYP    MAX

UNIT

TEST CONDITIONS

Ith Temperature Variation

DIth

-1.5                  1.5

mA

TA =0~70°C, IF = 12mA 

h Temperature Coefficient

Dh/DT

-0.29             -0.1

%/°C

TA =0~70°C, IF = 12mA

DlP Temperature Coefficient

DlP /DT

0.06

nm/°C

TA =0~70°C, IF = 12mA

DIMENSIONS:

PARAMETERS

SYMBOL

MIN       TYP      MIN

UNIT

Number of PIN photodiode elements

N

N

 

Pitch

P

250

mm

Chip length (1xN)

L

250xN

mm

Chip width

W

305

mm

Chip thickness

t

100

mm

Bond pads 

 

85x150

mm

Window size

 

       18         

mm

Outline Dimensions of Single Element: (unit: mm)


    

Detail dimensions:

 

 Note: These specifications are subject to change without notice.

If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.

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