905nm 30W & 50W HIGH POWER PULSED LASER DIODES

LD-905-XXWP SERIES HIGH POWER PULSED LASER DIODES

LD-905-XXWP series of pulsed laser diodes are MQW structure devices with InGaAsP active layers fabricated using advanced MOCVD epitaxial growth techniques. Devices are designed with pulse width FWHM of 50~100ns and repetition frequency up to 15 KHz. Standard TO(9mm) package with wavelengths of 905 nm, different emitter sizes and stack layers are available for various applications such as range finder and optical measurement.

Features:

High peak output Power: 30W &50W
InGaAsP/InGaAsP MQW Structure by MOCVD
High reliability
High efficiency

Applications:

Range Finder
Optical Measurement

Maximum Rating

Parameter	Rating
Peak Reverse Voltage	Vrm 2 V
Operating Case Temperature	-55 to +65 ^oC
Storage Case Temperature	-55 to +85 ^oC
Soldering	5 seconds,+200 ^oC

Specifications (Tc=25^oC)

Parameter	Symbol	LD905-30WP	LD905-50WP	Units
Center Wavelength	λo	905	905	nm
Center Wavelength Tolerance		±10	±10
Peak Output Power	Po	30	50	W
Peak Forward Current	If	50	50	A
Pulse Width Max.	Tw	50-100	50-100	ns
Duty Factor Max.	DF	0.05	0.05	%
Threshold Current	Ith	2.5	2.5	A
Peak Forward Voltage Typ.	Vf	45	48	V
Beam Divergence FWHM	θ//×θ⊥	10x40	10x40	Degree
Emitter Area (WxH)		370x1	370x100	µm
Number of Laser Diode Element		1	2	pcs.
Package		TO (Φ9mm)	TO (Φ9mm)

Typical Performance

TO(Φ9mm) Package

Pin 1: LD cathode; Pin 2: LD anode; Pin 3: N/A

Unit: mm

Note: The above specifications are subject to change without notice.

If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or e-mail to: info@lasermate.com.

HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |