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Specifications of 850nm 50mW Laser Diode

Model No. LD-850-50A

Features

  •  Wavelength 850 nm (Typ.)

  • 50mW CW Operation at –10 to +50 oC

  • Low Threshold Current 15mA (Typ.)

  • Standard package: TO-18 (Æ 5.6mm package)  

  • Cost effective

Applications

  • Laser printer

  • Bar-code scanner

  • Military

Absolute Maximum Ratings

PARAMETER

SYMBOL

RATING

Optical Output Power

P0

50 mW

LD Reverse Voltage

VRL

3.5V

PD Reverse Voltage

VRP

30 V

PD Forward current IRP 10mA

Operation Temperature

To

-10 to +50 oC

Storage Temperature

TSTG

-40 to +85oC

Electrical – Optical Characteristics

PARAMETER

SYMBOL

MIN.

TYP

MAX.

UNITS

TEST CONDITION

Lasing Wavelength

λp

830

845

850

nm

P0=50mW

Threshold Current

Ith

-

15

25

mA

P0=50mW

Operation Current

Iop

-

75

95

mA

P0=50mW

Operation Voltage

Vop

-

1.8

2.4

V

P0=50mW

Monitor Current

Im

0.15

0.5

1

mA

P0=50mW, VRP = 0V

Slope Efficiency

η

0.7

0.8

1

mW/mA

P0=50mW

Beam Divergence

q//

9

12

15

deg

P0=50mW (parallel)

Beam Divergence

q^

26

30

35

deg

P0=50mW (perpendicular)

Parallel FFP deviation angle Dq// - - ±3 deg P0=50mW
Perpendicular FFP deviation angle Dq^ - - ±3 deg P0=50mW
Emission point accuracy DxDy - - ±80 um P0=50mW
Dz - - ±40 um P0=50mW

 Pin Configuration

Common Anode Pinout

 

Bottom view

    

Note: The specifications are subject to change without notice. 

If you have any comments or request for detail product information, please fill the
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