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Specifications
of 850nm 10mW Laser Diode
Model
No. LD-850-10A
Features
-
Index Guided MQW Structure
-
Wavelength
850 nm (Typ.)
-
10mW CW Operation at –10 to +50 oC
-
Low Threshold Current 10mA (Typ.)
-
Standard package: TO-18 (Æ 5.6mm package)
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PARAMETER
|
SYMBOL
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RATINGS
|
|
Optical Output Power
|
P0
|
12 mW
|
|
LD Reverse Voltage
|
VRL
|
2 V
|
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PD Reverse Voltage
|
VRD
|
30 V
|
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Operation Temperature
|
To
|
-10 to +50 oC
|
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Storage Temperature
|
TSTG
|
-40 to +85oC
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Electrical –
Optical Characteristics
|
PARAMETER
|
SYMBOL
|
MIN.
|
TYP
|
MAX.
|
UNITS
|
TEST CONDITION
|
|
Lasing Wavelength
|
λp
|
840
|
850
|
860
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nm
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P0=10mW
|
|
Threshold Current
|
Ith
|
5
|
10
|
20
|
mA
|
P0=10mW
|
|
Operation Current
|
Iop
|
15
|
25
|
35
|
mA
|
P0=10mW
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Operation Voltage
|
Vop
|
-
|
1.9
|
2.5
|
V
|
P0=10mW
|
|
Monitor Current
|
Im
|
100
|
300
|
600
|
mA
|
P0=10mW, VR = 5V
|
|
Slope Efficiency
|
η
|
0.4
|
0.7
|
0.9
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mW/mA
|
P0=10mW
|
|
Beam Divergence
|
Θll
|
7
|
|
12
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deg
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P0=10mW (parallel)
|
|
Beam Divergence
|
Θ┴
|
25
|
32
|
40
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deg
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P0=10mW (perpendicular)
|
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Astigmatism
|
As
|
|
|
15
|
mm
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P0=10mW, NA=0.4
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Pin Configuration
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