Specifications of LD-808-1000G Laser Diode
 
Model No.: LD-808-1000G

APPLICATIONS

  • Diode pump solid state laser
  • Medical instrument 
FEATURES
  • Wavelength : l = 808 nm (Typ.)
  • Output power : 1000mW CW
  • High Efficiency MOCVD Quantum Well Design
  • 9mm f package 

Bottom view
Unit: inch

Pin configuration:
1: LD cathode
2: LD anode
Absolute Maximum Ratings (TC=25oC)
Description
Symbol
Rating
Optical Power (mW)
P0
1000
Operating Temperature (oC)
Top
-10 ~ 40
Storage Temperature (oC)
Tstg
-30 ~ 70
LD Reverse Voltage (V)
VRLD
3

Optical & Electrical Characteristic
 
LD-808-1000G
Description Symbol Min. Typ. Max Test  Condition
Lasing Wavelength(nm) l
790
808
 815 P0=1000mW
Threshold Current (mA)
Ith
—
200
400
CW
Operating Current (A)
Iop
—
1.20
1.50
P0=1000mW
Operating Voltage (V)
Vop
1.8
2.0
2.2
P0=1000mW
Slope Efficiency (W/A)  
0.8
1.0
 1.1  
Beam Divergence (deg)
q//
10
11
12
P0=1000mW FWHM
q ^
25
30
40
Recommended Operating Temperature (oC)    
25
    

* ESD precautions must be taken when handling this unit.
** Invisible laser radiation avoid direct exposure to beam.
Note: Specification subject to change without notice.

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