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Model No.  LD-660-100B

Features

  • Wavelength 660 nm 100mW 50 oC Laser Diode

  • Highly reliable / COD free

  • PIN photodiode for Monitoring Laser Output

  • Standard package: TO-18 (Æ 5.6mm package)  

  • Common Anode pin configurations

Absolute Maximum Ratings

PARAMETER

SYMBOL

RATINGS

Optical Output Power

P0

110 mW

LD Reverse Voltage

VRL

2 V

PD Reverse Voltage

VRD

30 V

Operation Temperature

To

-10 to +50 oC

Storage Temperature

TSTG

-40 to +85oC

Electrical – Optical Characteristics

PARAMETER

SYMBOL

MIN.

TYP

MAX.

UNITS

TEST CONDITION

Lasing Wavelength

λp

654

658

662

nm

P0=100mW, RT

Threshold Current

Ith

-

55

70

mA

P0=5-10mW

Operation Current

Iop

130

142

190

mA

P0=100mW

Operation Voltage

Vop

2.0

2.65

2.9

V

P0=100mW

Slope Efficiency

η

0.8

1

1.25

mW/mA

P0=90-100mW

Beam Divergence

q//

7

10

12

deg

P0=100mW (parallel)

Beam Divergence

q^

15

17

19

deg

P0=100mW(perpendicular)

Monitor Current

Im

1

1.5

2

mA

P0=100mW, VR = 5V

Parallel FFP deviation angle Dq//     ±3 deg P0=100mW
Perpendicular FFP deviation angle Dq^     ±3 deg P0=100mW

Emission point accuracy

DxDyDz

  -

-

  ±80

mm

P0=100mW

Note: Specifications are subject to change without notice.

Pin Connection  

Model No.:  

     LD-660-100B

 

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