Features
-
InGaAs/InP
PIN Photodiode
-
High
responsivity at 1310nm and 1550nm
-
Low
dark current
-
Fast
pulse response
-
-40
~85 oC operating temperature
-
Hermetically
sealed 3-pin metal case
-
Active
diameter is 55, 75, or 300 mm
Packaging
-
TO-46 package with integrated ball lens cap
Applications
-
R-13-055-G-B
(OC-48
Receiver)
-
R-13-075-G-B
(OC-3,
OC-12, Gigabit Receiver)
-
R-13-300-G-B
(LD
Power Monitoring)
Mechanical outline: (unit:
mm)
|
Absolute
Maximum Ratings (Tc=25oC)
|
|
Parameter
|
Symbol
|
Value
|
Unit
|
Supply
Reverse voltage
|
VR
|
20
|
V
|
Forward
Current
|
IF
|
2
|
mA
|
Reverse
Current
|
IR
|
1
|
mA
|
Operating
Temperature
|
Topr
|
-40~+85
|
oC
|
Storage
Temperature
|
Tstg
|
-40~+85
|
oC
|
|
Model
No. R-13-055-G-B
|
Optical
and Electrical Characteristics (Tc=25oC)
|
Parameter
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
Test condition
|
|
Active
Area (Dia.)
|
|
|
55
|
|
µm
|
-
|
|
Detection
Range
|
|
1100
|
1310
|
1650
|
nm
|
-
|
|
Responsivity
|
R
|
0.75
|
0.8
|
-
|
A/W
|
VR=5V,λ=1300nm
|
|
Dark
Current
|
Idark
|
|
|
0.7
|
nA
|
VR=5V
|
|
Capacitance
|
|
|
|
0.7
|
pF
|
VR=5V
|
|
Rise/Fall
Time
|
Tr
/
Tf
|
|
|
0.3
|
ns
|
VR=5V, 10%~90%
|
|
Bandwidth
|
BW
|
3
|
|
|
GHz
|
VR=5V
|
|
Model No. R-13-075-G-B
|
|
Optical
and Electrical Characteristics (Tc=25oC)
|
Parameter
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
Test condition
|
|
Active
Area (Dia.)
|
|
|
75
|
|
µm
|
-
|
|
Detection
Range
|
|
1100
|
1310
|
1650
|
nm
|
-
|
|
Responsivity
|
R
|
0.8
|
0.85
|
-
|
A/W
|
VR=5V,λ=1300nm
|
|
Dark
Current
|
Idark
|
|
0.4
|
0.8
|
nA
|
VR=5V
|
|
Capacitance
|
C
|
|
0.7
|
0.9
|
pF
|
VR=5V
|
|
Rise/Fall
Time
|
| | |
