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  Model No.: PDC-85-V3-1

Features:

·     GaAs PIN photodiode chip with two top side wire-bond pads

·     Sensitive area 100 mm with >4GHz bandwidth

·     Rise/Fall time (20-80%) <100 ps

·     Optimized for fiber optic applications

 

ELECTRO-OPTICAL CHARACTERISTICS: (for each single PIN photodiode element)

PARAMETERS

SYMBOL

MIN       TYP      MAX

UNIT

TEST CONDITIONS

Responsivity

R

   0.55            0.6

A/W

-1.6V, @ 850nm

Wavelength range

l

 780           850            860

nm

-1.6V

Dark Current

ID

              0.1            1

nA

-1.6V

Breakdown Voltage

VBD

   1

mA

-20V

Capacitance

C

                0.36                0.5

pF

-3V to 0V

Rise/Fall Time

TR/TF

                             100/100

ps

20% - 80%

Bandwidth

BW

4                 6

GHz

-3V to 0V

 

DIMENSIONS:

PARAMETERS

SYMBOL

MIN       TYP      MIN

UNIT

Chip size

 

       250 x 460       

mm

Chip thickness

t

       150         

mm

Bonding pads diameter (see below)

 

80

mm

Sensitive area (see below)

 

100

mm

 

OUTLINE DIAGRAM: (unit in mm)

Model No.: PDC-85-V3-1                   

                    (size: 250 x 460 mm)                      

                                                 

Bond pads left: anode, right: cathode.    Bond pads left: cathode, right: anode.

If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.


Lasermate Group, Inc.
1987 W. Holt Ave., Pomona, CA 91768, USA  Tel: (909) 718-0999  Fax: (909)718-0998

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