1 x N (N= 2, ..., 40) InGaAs PIN Arrays with 70mm Sensitive Area
Model No.: PDA-13-1XN (N=2, ..., 40)
We offer 1 x N (N= 1, ..., 40) InGaAs PIN photodiode
arrays with 70mm
sensitive area with >1GHz bandwidth for high speed applications.
The specifications of 1xN (N=2, ..., 40) arrays are same except the
size. The following specification is for 1 x 4 InGaAs
PIN arrays as an example. Please contact us for more information if
needed.
Model No.: PDA-13-1X4 (for N=4)
Features:
-
InGaAs PIN photodiode array
-
1 x 4 array bar with 250 mm pitch
-
Sensitive area 70 mm
-
Bandwidth >1.5GHz
-
Optimized for fiber optic applications
ELECTRO-OPTICAL CHARACTERISTICS: (for each single
PIN photodiode element)
| PARAMETERS |
SYMBOL
|
MIN TYP
MAX
|
UNIT
|
TEST CONDITIONS |
| Responsivity(1) |
R
|
0.9
|
A/W
|
VR =5V, l=1300nm |
| Responsivity Uniformity(2) |
DR
|
3
|
%
|
|
| Surface Reflectivity |
RS
|
1
|
%
|
l=1300nm |
| Dark Current |
ID
|
0.1 1
|
nA
|
VR =5V |
| Breakdown Voltage |
VBD
|
20
35 |
V
|
IR =10mA |
| Capacitance |
C
|
0.7 0.8
|
pF
|
VR =5V f=1 MHz |
| Bandwidth |
BW
|
1.5 |
GHz
|
VR =5V |
Notes:
1. AR coating optimized for the specific 1300nm wavelength.
2. The difference of the maximum and minimum responsivity
of each photodiode of an array shall not be >3%.
Fig. 1 Typical Forward Current and Dark Current
 |
Fig. 2 Typical Photo-Current
 |
Fig. 3 Typical Breakdown Curve
 |
Fig. 4 Typical C-V Curve
 |
DIMENSIONS:
|
PARAMETERS
|
SYMBOL
|
MIN TYP
MIN
|
UNIT
|
|
Number of PIN photodiode elements
|
N
|
4
|
|
|
Pitch
|
P
|
250
|
mm
|
|
Chip length (1xN)
|
L
|
1000
|
mm
|
|
Chip width
|
w
|
250
|
mm
|
|
Chip thickness
|
t
|
200
|
mm
|
|
Diameter bond pads (see below)
|
|
80
|
mm
|
|
Diameter sensitive area (see
below)
|
|
70
|
mm
|
OUTLINE DIAGRAM OF SINGLE ELEMENT: (unit in mm)
|
