GaAs PIN Arrays with 100mm Sensitive Area for 3.2Gbps

We offer 1 x N (N= 1, ..., 40) GaAs PIN photodiode chip & arrays as well as 850 nm VCSEL chip & arrays now. We provide GaAs PIN phodiode PIN arrays with 100mm sensitive area, which is with bandwidth >1.9GHz for 3.2Gbps applications.

The specifications of 1xN (N=2, ..., 40) arrays are same except the size. The following specifications are for 1 x 4 GaAs PIN arrays as examples. Please contact us for more information if needed.

Model No.: PDA-85-1X4

Features:

GaAs PIN photodiode 1 x 4 array bar with 250 mm pitch
Sensitive area 100 mm
Low dark current and low capacitance.
Rise/Fall time (10-90%) <100 ps at 50 W
Optimized for fiber optic applications

ELECTRO-OPTICAL CHARACTERISTICS: (for each single PIN photodiode element)

PARAMETERS	SYMBOL	MIN TYP MAX	UNIT	TEST CONDITIONS
Responsivity⁽¹⁾	R	0.50 0.55	A/W	V_R =5V, l=850nm
Surface Reflectivity	R_S	1	%
Responsivity Uniformity⁽²⁾	DR	3	%
Dark Current	I_D	0.1 1.0	nA	V_R =5V
Breakdown Voltage	V_BD	50 70	V	I_R =10mA
Capacitance	C	0.4 0.6 0.8	pF	V_R =5V f=1 MHz
Rise/Fall Time (10-90%)	T_R/T_F	80 100	ps	At 50 W

Notes:

1. AR coating optimized for the specific 850nm wavelength.

2. The difference of the maximum and minimum responsivity of each photodiode of an array shall not be >3%.

DIMENSIONS:

PARAMETERS	SYMBOL	MIN TYP MIN	UNIT
Number of PIN photodiode elements	N	4
Pitch	P	250	mm
Chip length (1xN)	L	970	mm
Chip width	W	220	mm
Diameter bond pads (see below)		75	mm
Diameter sensitive area (see below)		100	mm

OUTLINE DIAGRAM: (unit in mm)

1x4 GaAs PIN Array

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